Title :
A Parametric Study of InGaN/GaN Nanorod Core-Shell LEDs
Author :
Der Maur, Matthias Auf ; Sacconi, Fabio ; Carlo, Aldo Di
Author_Institution :
Dept. of Electron. Eng., Univ. of Rome Tor Vergata, Rome, Italy
Abstract :
In this paper, we present simulation results on the optical and transport properties of InGaN/GaN core-shell nanorod light-emitting diodes. The influence of contact position, surface recombination, and doping configuration on internal quantum efficiency is examined. The qualitative behavior when adding an electron blocking layer and the dependence on In content have been studied.
Keywords :
III-V semiconductors; elemental semiconductors; gallium compounds; indium compounds; light emitting diodes; nanorods; semiconductor doping; InGaN-GaN; contact position; doping configuration; electron blocking layer; internal quantum efficiency; light-emitting diodes; nanorod core-shell LED; parametric study; qualitative behavior; surface recombination; Analytical models; Anodes; Gallium nitride; Light emitting diodes; Radiative recombination; Strain; Core shell; light-emitting diode (LED); nanorod; nitrides; simulation;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2012.2226037
