Title :
Enhanced Normal-Incident Absorption of Quantum-Dot Infrared Photodetectors With Smaller Quantum Dots
Author :
Tseng, Chi-Che ; Chou, Shu-Ting ; Chen, Yi-Hao ; Chen, Cheng-Nan ; Lin, Wei-Hsun ; Chung, Tung-Hsun ; Lin, Shih-Yen ; Chiu, Pei-Chin ; Chyi, Jen-Inn ; Wu, Meng-Chyi
Author_Institution :
Dept. of Electr. Eng., Nat. Tsing Hua Univ., Hsinchu
fDate :
7/15/2008 12:00:00 AM
Abstract :
Ten-period InAs-GaAs quantum-dot (QD) infrared photodetectors grown under different In adatom supply procedures are investigated. Two In adatom supply procedures of In shutter 1) always opened and 2) periodically opened/closed are adopted in this letter. Larger QD sizes in both height and diameter and more uniform size distribution are observed for samples grown under an In shutter periodically opened/closed condition. The device with QDs grown under the In shutter always opened condition has revealed shorter detection wavelengths and enhanced normal incident absorption. The phenomenon shows that beside the increase of energy difference between confinement states, smaller QD sizes would also enhance the normal incident absorption predicted for the theoretically zero-dimensional QD structures.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; photodetectors; semiconductor growth; semiconductor quantum dots; InAs-GaAs; adatom supply procedures; confinement states; enhanced normal-incident absorption; optical shutter; quantum-dot growth; quantum-dot infrared photodetectors; zero-dimensional QD structures; Atomic measurements; Dark current; Electromagnetic wave absorption; Gallium arsenide; Gratings; Photodetectors; Photoluminescence; Quantum dots; Quantum well devices; Temperature; Quantum dot (QD); quantum-dot infrared photodetector (QDIP);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2008.926020