• DocumentCode
    761700
  • Title

    Single Event Upsets in Deep-Submicrometer Technologies Due to Charge Sharing

  • Author

    Amusan, Oluwole A. ; Massengill, Lloyd W. ; Baze, Mark P. ; Sternberg, Andrew L. ; Witulski, Arthur F. ; Bhuva, Bharat L. ; Black, Jeffrey D.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Vanderbilt Univ., Nashville, TN
  • Volume
    8
  • Issue
    3
  • fYear
    2008
  • Firstpage
    582
  • Lastpage
    589
  • Abstract
    Circuit and 3D technology computer aided design mixed-mode simulations show that the single event upset vulnerability of 130- and 90-nm hardened latches to low linear energy transfer (LET) particles is due to charge sharing between multiple nodes as a result of a single ion strike. The low LET vulnerability of the hardened latches is verified experimentally.
  • Keywords
    electronic design automation; radiation hardening (electronics); semiconductor device reliability; charge sharing; computer aided design; deep-submicrometer technologies; hardened latches; linear energy transfer particles; mixed-mode simulations; single event upsets; single ion strike; Alpha particles; charge sharing; dual interlocked cell (DICE) latch; neutrons; parasitic bipolar transistor; radiation hardened by design; single event circuit characterization; single event upset (SEU);
  • fLanguage
    English
  • Journal_Title
    Device and Materials Reliability, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1530-4388
  • Type

    jour

  • DOI
    10.1109/TDMR.2008.2000892
  • Filename
    4548139
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=761700