Title :
X-band GaAs MESFET oscillator for cryogenic application at 4.2 K
Author :
Vollmer, E. ; Gutmann, P.
Author_Institution :
Physikalisch-Tech. Bundesanstalt, Braunschweig, Germany
Abstract :
A stripline X-band oscillator for use in a Josephson potentiometer has been designed and constructed. An oscillator comprising a packaged GaAs MESFET was successfully tested at temperatures of 300 and 4.2 K. The cooling improves the short term stability of the frequency during a period of several minutes by a factor of 10 to 10-6.
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; field effect integrated circuits; frequency stability; gallium arsenide; microwave oscillators; strip line components; 300 K; 4.2 K; GaAs; GaAs MESFET oscillator; Josephson potentiometer; SHF; cryogenic application; frequency stability; packaged GaAs MESFET; semiconductors; short term stability; stripline X-band oscillator; superconducting MMIC; temperatures;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911367
