Low-noise, high-gain Si-bipolar preamplifiers for 10 Gb/s optical-fiber links-design and realization

Author

Neuhäuser, Michael ; Rein, Hans-Martin ; Wernz, Horst

Author_Institution

Ruhr-Univ., Bochum, Germany

Volume

31

Issue

1

fYear

1996

fDate

1/1/1996 12:00:00 AM

Firstpage

24

Lastpage

29

Abstract

Design principles and circuit configurations of Si-bipolar transimpedance preamplifiers for 10 Gb/s optical-fiber links are discussed. The target specifications of the amplifier are near the limit achievable by the available technology. Therefore, the different amplifier stages had to be carefully optimized with respect to both flat magnitude and constant group delay of the total transimpedance up to about 7.5 GHz. Two different versions of preamplifiers were fabricated in an advanced production technology (f_T≈23 GHz). High transimpedance (710 Ω) and low equivalent input noise current density (averaged: ≈9 pA/√(Hz)) were achieved

Keywords

bipolar analogue integrated circuits; elemental semiconductors; integrated circuit design; integrated circuit noise; optical fibre communication; optical receivers; preamplifiers; silicon; 10 Gbit/s; Si; bipolar preamplifiers; circuit configurations; constant group delay; equivalent input noise current density; flat magnitude; optical-fiber links; production technology; transimpedance preamplifiers; Circuits; Current density; Degradation; Frequency; Impedance; Optical amplifiers; Optical receivers; Optimized production technology; Preamplifiers; Stimulated emission;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.485841

Filename

485841