Title :
Characterization of the Ultrathin HfO2 and Hf-Silicate Films Grown by Atomic Layer Deposition
Author :
Chen, Tze Chiang ; Peng, Cheng-Yi ; Tseng, Chih-Hung ; Liao, Ming-Han ; Chen, Mei-Hsin ; Wu, Chih-I ; Chern, Ming-Yau ; Tzeng, Pei-Jer ; Liu, CheeWee
Author_Institution :
Graduate Inst. of Electron. Eng., National Taiwan Univ., Taipei
fDate :
4/1/2007 12:00:00 AM
Abstract :
The physical properties of HfO2 and Hf-silicate layers grown by the atomic layer chemical vapor deposition are characterized as a function of the Hf concentration and the annealing temperature. The peaks of Fourier transform infrared spectra at 960, 900, and 820 cm-1 originate from Hf-O-Si chemical bonds, revealing that a Hf-silicate interfacial layer began to form at the HfO2/SiO 2 interface after post deposition annealing process at 600 degC for 1 min. Moreover, the intensity of the peak at 750 cm-1 can indicate the degree of crystallization of HfO2. The formed Hf-silicate layer between HfO2 and SiO2 is also confirmed by X-ray photoelectron spectroscopy
Keywords :
X-ray reflection; annealing; atomic layer deposition; chemical vapour deposition; hafnium compounds; infrared spectra; semiconductor thin films; silicon compounds; 1 min; 600 C; Fourier transform infrared spectra; HfO2-SiO2; X-ray photoelectron spectroscopy; X-ray reflectivity; annealing temperature; atomic layer chemical vapor deposition; atomic layer deposition; interfacial layer; ultrathin semiconductor film growth; Annealing; Atomic layer deposition; Chemical processes; Chemical vapor deposition; Crystallization; Fourier transforms; Hafnium oxide; Infrared spectra; Spectroscopy; Temperature; $ hbox{HfO}_{2}$; Fourier transform infrared (FTIR); Hf-silicate; X-ray photoelectron spectroscopy (XPS); X-ray reflectivity (XRR); high- $k$;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.892012
