DocumentCode :
762876
Title :
A low local input 1.9 GHz Si-bipolar quadrature modulator with no adjustment
Author :
Otaka, Shoji ; Yamaji, Takafumi ; Fujimoto, Ryuichi ; Takahashi, Chikau ; Tanimoto, Hiroshi
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
Volume :
31
Issue :
1
fYear :
1996
fDate :
1/1/1996 12:00:00 AM
Firstpage :
30
Lastpage :
37
Abstract :
A 1.9 GHz quadrature modulator with an onchip 90° phase-shifter was fabricated using a silicon bipolar technology. This paper investigates error factors caused by a limiter amplifier. It is found that a gain enhancement technique in a phase-shifter circuit is effective in realizing an adjustment free quadrature modulator; we propose a new high-gain phase shifter circuit for this purpose. This technique employs a current mode interface and an on-chip inductor. An image-rejection ratio of over 45 dBc and a carrier feedthrough of below -40 dBc were attained at -15 dBm local oscillator power. This quadrature modulator operates at 2.7 V supply voltage. The operating frequency ranges from 1.2 GHz to 2.3 GHz. The die size of the quadrature modulator IC is 2.49 mm×2.14 mm
Keywords :
UHF integrated circuits; UHF phase shifters; bipolar analogue integrated circuits; elemental semiconductors; limiters; modulators; silicon; 1.2 to 2.3 GHz; 1.9 GHz; 2.7 V; 90° phase-shifter; Si; bipolar quadrature modulator; carrier feedthrough; current mode interface; die size; error factors; gain enhancement technique; image-rejection ratio; limiter amplifier; local oscillator power; operating frequency; phase-shifter circuit; Capacitors; Circuits; Energy consumption; Frequency; Inductors; Local oscillators; Mutual coupling; Phase modulation; Silicon; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.485862
Filename :
485862
Link To Document :
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