Title :
Correction to “Edge Profile Effect of Tunnel Oxide on Erase Threshold Voltage Distributions in Flash Memory Cells”
Author :
Kim, Bomsoo ; Kwon, Wook-Hyun ; Baek, Chang-Ki ; Son, Younghwan ; Park, Chan-Kwang ; Kim, Kinam ; Kim, Dae M.
Author_Institution :
Sch. of Comput. Sci., Korea Inst. for Adv. Study, Seoul
fDate :
4/1/2007 12:00:00 AM
Abstract :
In the original article by B. Kim (see ibid., vol. 53, no. 12, p. 3012-3019, Dec. 2006) the biography for Dr. Kinam Kim was out of date. A more current one is given.
Keywords :
flash memories; edge profile effect; erase threshold voltage distributions; flash memory cells; tunnel oxide;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.890466
