Asymmetric Electrical Properties of Corbino a-Si:H TFT and Concepts of Its Application to Flat Panel Displays

Author

Lee, Hojin ; Yoo, Juhn-Suk ; Kim, Chang-Dong ; Chung, In-Jae ; Kanicki, Jerzy

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI

Volume

54

Issue

4

fYear

2007

fDate

4/1/2007 12:00:00 AM

Firstpage

654

Lastpage

662

Abstract

Inverted stagger hydrogenated-amorphous-silicon (a-Si:H) Corbino thin-film transistors (TFTs) were fabricated with a five-photomask process used in the processing of the active-matrix liquid-crystal displays (AM-LCD). The authors show that the a-Si:H Corbino TFT has the asymmetric electrical characteristics under different drain-bias conditions. To accommodate for these differences when the electrical device parameters are extracted, the authors developed asymmetric geometric factors. The ON-OFF current ratio can be significantly enhanced by choosing the outer electrode as the drain, while the field-effect mobility and threshold voltage are identical when different drain-bias conditions are used. Finally, the authors developed concepts of its possible application to AM-LCDs and active-matrix organic light-emitting displays

Keywords

LED displays; amorphous semiconductors; electric properties; flat panel displays; liquid crystal displays; masks; organic light emitting diodes; thin film transistors; Corbino thin-film transistors; Si:H; active-matrix liquid-crystal displays; annular electrode; asymmetric electrical properties; asymmetric geometric factors; field-effect mobility; flat panel displays; hydrogenated-amorphous-silicon; inverted stagger; light-emitting displays; photomask process; ring-shaped electrode; Active matrix technology; Amorphous silicon; Electric variables; Electrodes; Flat panel displays; Laboratories; Research and development; Solid state circuits; Thin film transistors; Threshold voltage; Annular electrode; Corbino; hydrogenated amorphous silicon (a-Si:H); ring-shaped electrode; thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.891857

Filename

4142886