A sub-2.0 V BiCMOS logic circuit with a BiCMOS charge pump

Author

Okamura, Hitoshi ; Atsumo, Takao ; Takeda, Koichi ; Takada, Masahide ; Imai, Kiyotaka ; Kinoshita, Yasushi ; Yamazaki, Toru

Author_Institution

Syst. ASIC Div., NEC Corp., Kawasaki, Japan

Volume

31

Issue

1

fYear

1996

fDate

1/1/1996 12:00:00 AM

Firstpage

84

Lastpage

90

Abstract

A BiCMOS logic circuit with very small input capacitance has been developed, which operates at low supply voltages. A High-beta BiCMOS (Hβ-BiCMOS) gate circuit which fully utilizes the bipolar transistor features achieves 10 times the speed of a CMOS gate circuit with the same input capacitance and operating at 3.3 V supply voltage. In order to lower the minimum supply voltage of Hβ-BiCMOS, a BiCMOS circuit configuration using a charge pump to pull up the output high level of the BiCMOS gate circuit is proposed. By introducing a BiCMOS charge pump, Hβ-BiCMOS achieves very high speed operation at sub-2.0 V supply voltage. It has also been demonstrated that only a very small number of charge pump circuits are required to drive a large number of Hβ-BiCMOS gate circuits

Keywords

BiCMOS logic circuits; 2.0 V; BiCMOS charge pump; BiCMOS logic circuit; bipolar transistor; high speed operation; high-beta BiCMOS gate circuit; input capacitance; low voltage operation; BiCMOS integrated circuits; Bipolar transistors; Charge pumps; Clamps; Delay; Impedance; Logic circuits; Low voltage; MOSFETs; Parasitic capacitance;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.485869

Filename

485869