High-Performance 15-V Novel LDMOS Transistor Architecture in a 0.25- μm BiCMOS Process for RF-Power Applications

Author

Muller, D. ; Giry, A. ; Judong, F. ; Rossato, C. ; Blanchet, F. ; Szelag, B. ; Aguirre, A. Monroy ; Sommet, R. ; Pache, D. ; Noblanc, O.

Author_Institution

STMicroelectron., Crolles

Volume

54

Issue

4

fYear

2007

fDate

4/1/2007 12:00:00 AM

Firstpage

861

Lastpage

868

Abstract

The optimization of the small and large signal performances of a radio frequency (RF)-LDMOS is presented via the achievement of a novel LDMOS architecture. Specific process steps are introduced into a 0.25-mum BiCMOS technology and precisely described to realize a fully salicided gate RF-LDMOS architecture. Significant improvement is obtained on the small-signal - f_T and F_max - and power performances while maintaining good dc characteristics

Keywords

BiCMOS integrated circuits; MOSFET; power amplifiers; radiofrequency amplifiers; 0.25 micron; 15 V; BiCMOS integrated circuits; BiCMOS process; LDMOS transistor architecture; MOSFET power amplifier; RF-power applications; fully salicided gate; radio frequency-LDMOS; semiconductor device fabrication; semiconductor device measurements; BiCMOS integrated circuits; Fabrication; Feedback; MOSFETs; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Radiofrequency identification; Semiconductor optical amplifiers; Signal processing; BiCMOS integrated circuits; MOSFET power amplifier; power amplifier; semiconductor device fabrication; semiconductor device measurements;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.892355

Filename

4142891