DocumentCode :
762987
Title :
Advanced modeling of distortion effects in bipolar transistors using the Mextram model
Author :
De Vreede, Leo C N ; De Graaff, Henk C. ; Mouthaan, Koen ; De Kok, Marinus ; Tauritz, Joseph L. ; Baets, Roel G F
Author_Institution :
Inst. for Microelectron. & Submicron Technol., Delft Univ. of Technol., Netherlands
Volume :
31
Issue :
1
fYear :
1996
fDate :
1/1/1996 12:00:00 AM
Firstpage :
114
Lastpage :
121
Abstract :
The modeling of distortion effects in bipolar transistors due to the onset of quasi-saturation is considered. Computational results obtained using the Mextram and Gummel-Poon models as implemented in a harmonic balance simulator are compared with measured results
Keywords :
bipolar transistors; electric distortion; semiconductor device models; Gummel-Poon model; Mextram model; bipolar transistors; distortion; harmonic balance simulator; quasi-saturation; Bipolar transistors; Computational modeling; Distortion measurement; Energy consumption; Equations; Hot carriers; Space charge; Telecommunication computing; Transmitters; Voltage;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.485873
Filename :
485873
Link To Document :
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