Title :
A 78-114 GHz monolithic subharmonically pumped GaAs-based HEMT diode mixer
Author :
Yuh-Jing Hwang ; Chun-Hsien Lien ; Huei Wang ; Sinclair, M.W. ; Gough, R.G. ; Kanoniuk, H. ; Tah-Hsiung Chu
Author_Institution :
Inst. of Commun. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fDate :
6/1/2002 12:00:00 AM
Abstract :
A W-band subharmonically pumped (SHP) diode mixer is designed for fixed LO frequency operation. It is fabricated on a 4-mil substrate using 0.15 μm GaAs PHEMT MMIC process. The on-wafer measurement results show that the conversion loss is about 10 to 14 dB across the W band, as a 10 dBm 48 GHz LO signal is pumped. To our knowledge, this is the state-of-the-art result on low-conversion-loss wideband MMIC SHP diode mixer. The packaged module measurement shows a similar result. Both the simulation and measurement results are shown to be in good agreement.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC mixers; field effect MIMIC; gallium arsenide; integrated circuit design; millimetre wave diodes; millimetre wave mixers; 0.15 micron; 10 to 14 dB; 4 mil; 78 to 114 GHz; EHF; GaAs; GaAs PHEMT MMIC process; GaAs-based HEMT diode mixer; MM-wave mixer; PHEMT MIMIC; W-band mixer; fixed LO frequency operation; low-conversion-loss mixer; monolithic HEMT diode mixer; packaged module; subharmonically pumped diode mixer; wideband mixer; Diodes; Frequency; Gallium arsenide; HEMTs; Loss measurement; MMICs; Mixers; PHEMTs; Packaging; Wideband;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2002.1009997
