Title :
Base Charge Dynamics of Abrupt Base–Emitter Junction HBTs and Its Representation in Transistor Models
Author :
Sheinman, B. ; Ritter, D.
Author_Institution :
IBM Haifa Res. Lab., Haifa Univ. Campus
fDate :
4/1/2007 12:00:00 AM
Abstract :
Base charge dynamics in abrupt heterojunction bipolar transistors (HBTs) are determined by the thermionic/field emission boundary condition. As a result, their small and large signal models differ from those of bipolar junction transistors (BJTs), which obey the Shockley boundary condition. There is comparison of the base charge dynamics in the abrupt HBT to the BJT case and derive the small and large signal models of the abrupt HBT
Keywords :
heterojunction bipolar transistors; semiconductor device models; semiconductor heterojunctions; thermionic emission; Shockley boundary condition; base charge dynamics; base-emitter junction; field emission boundary condition; heterojunction bipolar transistors; semiconductor device modeling; semiconductor heterojunctions; thermionic emission; transistor models; Boundary conditions; Capacitance; Charge carrier processes; Equations; Frequency domain analysis; Helium; Heterojunction bipolar transistors; Semiconductor device modeling; Thermionic emission; Voltage; Bipolar transistors; heterojunction bipolar transistors; s emiconductor device modeling; semiconductor heterojunctions; thermionic emission;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.892363
