Title :
Double junction AlInAs/GaInAs multiquantum well avalanche photodiodes
Author :
Le Bellego, Y. ; Praseuth, J.P. ; Scavennec, A.
Author_Institution :
CNET, Bagneux, France
Abstract :
A separate absorption, grading, and multiplication avalanche photodiode with an AlInAs/GaInAs multiquantum well multiplication region is reported. This device exhibits a low excess-noise factor and a gain-bandwidth product of 50 GHz, due to the high ratio of ionisation rates of the multiplication material. In addition, a large bandwidth is obtained owing to the use of an undoped (n type) GaInAs absorption layer, fully depleted when multiplication occurs.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; electron device noise; gallium arsenide; indium compounds; optical communication equipment; receivers; semiconductor quantum wells; GaInAs absorption layer; avalanche photodiodes; double junction SAGM-APD; excess-noise factor; gain-bandwidth product; high ratio of ionisation rates; large bandwidth; multiquantum well; multiquantum well multiplication region; semiconductors; separate absorption, grading, and multiplication;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911378
