Title :
Study of the Band-to-Band Tunneling Hot-Electron (BBHE) Programming Characteristics of p-Channel Bandgap-Engineered SONOS (BE-SONOS)
Author :
Wu, Min-Ta ; Lue, Hang-Ting ; Hsieh, Kuang-Yeu ; Liu, Rich ; Lu, Chih-Yuan
Author_Institution :
Emerging Central Lab., Macronix Int. Co. Ltd., Hsinchu
fDate :
4/1/2007 12:00:00 AM
Abstract :
The band-to-band tunneling hot-electron (BBHE) programming characteristics of the 2 bit/cell p-channel bandgap-engineered silicon-oxide-nitride-oxide-semiconductor (SONOS) (H. T. Lue, et al., in IEDM Tech. Diag., p. 331) device are extensively studied. The lateral BBHE profile is extracted by fitting the experimental current-voltage (I-V) characteristics with 2-D simulation. The results suggest that, after BBHE injection, the local channel potential barrier is reduced, which, in turn, raises the Vt of the p-channel device. The 2 bit/cell operation methods and second-bit effect (2 bit interaction) are examined. The effects of channel-length scaling, junction profile, and effective oxide thickness of the gate stack are also addressed
Keywords :
flash memories; hot carriers; mathematical analysis; semiconductor-insulator-semiconductor devices; tunnelling; 2D simulation; BBHE programming; BE-SONOS; NAND flash memory; band-to-band tunneling hot-electron programming; bandgap-engineered silicon-oxide-nitride-oxide-semiconductor; channel-length scaling; current-voltage characteristics; electron lateral profile; junction profile; p-channel bandgap-engineered SONOS; p-channel device; Consumer electronics; Costs; Electrons; Hot carriers; Interference; Medical simulation; Nonvolatile memory; SONOS devices; Throughput; Tunneling; 2 bit/cell; nand Flash memory; Bandgap-engineered SONOS (BE-SONOS); band-to-band tunneling hot-electron (BBHE); electron lateral profile; p-channel; second-bit effect; simulation;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.891250
