Analysis of Geometry-Dependent Parasitics in Multifin Double-Gate FinFETs

Author

Wu, Wen ; Chan, Mansun

Author_Institution

Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon

Volume

54

Issue

4

fYear

2007

fDate

4/1/2007 12:00:00 AM

Firstpage

692

Lastpage

698

Abstract

This paper analyzes the geometry-dependent parasitic components in multifin double-gate fin field-effect transistors (FinFETs). Parasitic fringing capacitance and overlap capacitance are physically modeled as functions of gate geometry parameters using a conformal mapping method. Also, a physical gate resistance model is presented, combined with parasitic capacitive couplings between source/drain fins and gates. The effects of geometrical parameters on FinFET design under different device configurations are thoroughly studied

Keywords

MOSFET; capacitance; conformal mapping; coupled circuits; semiconductor device models; FinFET; conformal mapping; gate geometry parameters; gate resistance; geometry-dependent parasitics; maximum oscillation frequency; multifin double-gate fin field-effect transistors; parasitic capacitive couplings; parasitic fringing capacitance; resistance-capacitance delay; source/drain fins; source/drain gates; Double-gate FETs; FinFETs; Geometry; MOS devices; MOSFETs; Parasitic capacitance; Radio frequency; Roentgenium; Silicon on insulator technology; Solid modeling; Cutoff frequency; double gate (DG); fin field-effect transistor (FinFET); gate resistance; maximum oscillation frequency; radio frequency (RF); resistance–capacitance $ (RC)$ delay;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.891252

Filename

4142911