Title :
Dual-Band Adjustable and Reactive I/Q Generator With Constant Resistance for Down- and Up-Converters
Author :
Tseng, Sheng-Che ; Meng, Chinchun ; Lee, Yueh-Ting
Author_Institution :
Dept. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu
Abstract :
Adjustable and reactive in-phase/quadrature (I/Q) generators with constant resistance are proposed for the first time in this paper with the properties of low loss, dual-band implementation, and high quadrature accuracy. The quadrature phase property and input matching of the I/Q generator can be achieved at all frequencies simultaneously by the constant-resistance I/Q generator. However, the magnitude balance of the dual-band I/Q generator is achieved at two designed frequencies. A 2.4/5.2-GHz I/Q down-converter and a 2.4/5.7-GHz single-sideband up-converter are fabricated using 0.35-mum SiGe BiCMOS technology. The dual-band I/Q generator along with two single-to-differential amplifiers is integrated to provide differential quadrature local oscillator signals for dual-band mixers. The magnitude imbalance and phase error between the I and Q channels of the down-converter are < 1% and < 1deg, respectively, while the maximum sideband rejection ratio of the up-converter is up to 50 dB. Additionally, the operation bandwidth (sideband rejection ratio > 30 dB) is 200 MHz at 2.4 GHz and 720 MHz at 5.7 GHz.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; convertors; differential amplifiers; microwave generation; semiconductor materials; SiGe; SiGe BiCMOS technology; constant resistance; differential amplifiers; down-converters; dual-band adjustable I/Q generator; frequency 2.4 GHz; frequency 5.2 GHz; frequency 5.7 GHz; frequency 720 MHz; input matching; quadrature phase property; reactive I/Q generator; size 0.35 mum; up-converters; Down-converter; SSB rejection ratio; SiGe BiCMOS; dual band; in-phase/quadrature (I/Q); single sideband (SSB); up-converter;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2008.926526