Title :
A micromachined poly(vinylidene fluoride-trifluoroethylene) transducer for pulse-echo ultrasound applications
Author :
Sleva, Michael Z. ; Briggs, Ronald D. ; Hunt, William D.
Author_Institution :
Sch. of Electr. Eng. Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fDate :
3/1/1996 12:00:00 AM
Abstract :
A process for manufacturing epoxy-backed integrated poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] transducers using standard microfabrication techniques is reported. The P(VDF-TrFE) is spin-cast over a silicon membrane, which is backfilled with epoxy to yield a wide-band, half-wavelength (/spl lambda//2)-resonant device suitable for pulse-echo use. The main advantages of the fabrication process are the ability to build several devices at a time on a single wafer and the potential for integrating electronics on the same substrate with the transducer. Twelve 31-MHz 2-mm diameter transducers were fabricated on a 2-in diameter silicon wafer. A pulse length of about 100 ns was achieved with a sample device, which exhibited a dynamic range of 40 dB and an insertion loss of 48 dB. The axial resolution of the transducer in healthy vascular tissue was estimated to be 79 /spl mu/m.
Keywords :
biomedical electronics; biomedical equipment; biomedical ultrasonics; micromachining; piezoelectric transducers; polymer blends; ultrasonic transducers; 100 ns; 2 in; 2 mm; 31 MHz; 48 dB; Si; axial resolution; dynamic range; epoxy-backed integrated poly(vinylidene fluoride-trifluoroethylene); healthy vascular tissue; insertion loss; integration; micromachined poly(vinylidene fluoride-trifluoroethylene) transducer; pulse length; pulse-echo ultrasound applications; silicon membrane; single wafer; spin-casting; standard microfabrication techniques; substrate; wide-band half-wavelength resonant device; Frequency; Manufacturing processes; Microelectronics; Piezoelectric films; Semiconductor device manufacture; Silicon; Substrates; Ultrasonic imaging; Ultrasonic transducers; Wideband;
Journal_Title :
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on