Title :
A high-efficiency class-E GaN HEMT power amplifier at 1.9 GHz
Author :
Xu, Hongtao ; Gao, Steven ; Heikman, Sten ; Long, Stephen I. ; Mishra, Umesh K. ; York, Robert A.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA
Abstract :
A single stage class-E power amplifier in GaN high electron mobility transistor (HEMT) technology is reported. The circuit operates at 1.9 GHz. At 30-V drain bias, a power-added-efficiency (PAE) of 57% and a maximum output power of over 37dBm was achieved, corresponding to a power density of 5.25W/mm. At 40-V drain bias, an output power of 38.7dBm is achieved at 50% PAE corresponding to a power density of 7.4W/mm
Keywords :
MMIC power amplifiers; gallium compounds; high electron mobility transistors; nitrogen compounds; 1.9 GHz; 50 percent; 57 percent; Class-E GaN HEMT; GaN; MMIC power amplifier; drain bias; high power; power density; power-added-efficiency; CMOS technology; Circuit simulation; Gallium nitride; HEMTs; High power amplifiers; MMICs; MODFETs; Power amplifiers; Power generation; Voltage; Class E; GaN; high efficiency; high electron mobility transistor (HEMT); high power; monolithic microwave integrated circuit (MMIC) power amplifier;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2005.861355
