• DocumentCode
    764321
  • Title

    Measurement of electro-optic coefficients of 1.3μ m self-assembled InAs=GaAs quantum dots

  • Author

    Tatebayashi, J. ; Laghumavarapu, R.B. ; Nuntawong, N. ; Huffaker, D.L.

  • Author_Institution
    Center for High Technol. Mater., Univ. of New Mexico, Albuquerque, NM
  • Volume
    43
  • Issue
    7
  • fYear
    2007
  • Firstpage
    410
  • Lastpage
    412
  • Abstract
    The electro-optic properties of 1.3 mum self-assembled InAs/GaAs quantum dots grown by metal organic chemical vapour deposition are reported. The linear and quadratic electro-optic coefficients are 2.4times10-11 m/V and 3.2times10-18 m2 /V2, respectively, which are significantly larger than those of GaAs bulk materials. Also, the linear electro-optic coefficient is almost comparable to that of lithium niobate
  • Keywords
    III-V semiconductors; MOCVD coatings; electro-optical effects; gallium arsenide; indium compounds; self-assembly; semiconductor quantum dots; 0.13 micron; InAs-GaAs; electro-optic coefficients; electro-optic properties; metal organic chemical vapour deposition; self-assembled quantum dots;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20070245
  • Filename
    4145305
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=764321