Title :
Measurement of electro-optic coefficients of 1.3μ m self-assembled InAs=GaAs quantum dots
Author :
Tatebayashi, J. ; Laghumavarapu, R.B. ; Nuntawong, N. ; Huffaker, D.L.
Author_Institution :
Center for High Technol. Mater., Univ. of New Mexico, Albuquerque, NM
Abstract :
The electro-optic properties of 1.3 mum self-assembled InAs/GaAs quantum dots grown by metal organic chemical vapour deposition are reported. The linear and quadratic electro-optic coefficients are 2.4times10-11 m/V and 3.2times10-18 m2 /V2, respectively, which are significantly larger than those of GaAs bulk materials. Also, the linear electro-optic coefficient is almost comparable to that of lithium niobate
Keywords :
III-V semiconductors; MOCVD coatings; electro-optical effects; gallium arsenide; indium compounds; self-assembly; semiconductor quantum dots; 0.13 micron; InAs-GaAs; electro-optic coefficients; electro-optic properties; metal organic chemical vapour deposition; self-assembled quantum dots;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20070245
