Title :
High-speed modulation of 850 nm InGaAsP/InGaP strain-compensated VCSELs
Author :
Kuo, H.C. ; Chang, Y.S. ; Lai, F.Y. ; Hsueh, T.H. ; Laih, L.H. ; Wang, S.C.
Author_Institution :
Inst. of Electro-optical Eng., Nat. Chiao-Tung Univ., Taiwan, Taiwan
fDate :
7/10/2003 12:00:00 AM
Abstract :
High performance 850 nm InGaAsP/InGaP strain-compensated vertical cavity surface emitting lasers (VCSELs) are demonstrated with superior output characteristics and modulation bandwidths up to 12.5 Gbit/s from 25 to 85°C.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical modulation; surface emitting lasers; 12.5 Gbit/s; 25 to 85 degC; 850 nm; InGaAsP-InGaP; InGaAsP/InGaP; high-speed modulation; modulation bandwidths; output characteristics; strain-compensated VCSELs; vertical cavity surface emitting lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030672
