DocumentCode :
764516
Title :
Optimised device processing for continuous-wave operation in GaAs-based quantum cascade lasers
Author :
Page, H. ; Dhillon, S. ; Calligaro, M. ; Ortiz, V. ; Sirtori, C.
Author_Institution :
Thales Res. & Technol., Orsay, France
Volume :
39
Issue :
14
fYear :
2003
fDate :
7/10/2003 12:00:00 AM
Firstpage :
1053
Lastpage :
1055
Abstract :
A significant improvement in the maximum continuous-wave operating temperature of GaAs-based quantum cascade lasers, Tmax=140 K, is reported. This has been achieved through optimised device processing that significantly reduces the total power consumption of the device and hence its self-heating.
Keywords :
III-V semiconductors; gallium arsenide; quantum cascade lasers; thermal resistance; 140 K; GaAs; continuous-wave operation; operating temperature; optimised device processing; quantum cascade lasers; self-heating; total power consumption;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20030680
Filename :
1220811
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=764516
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