DocumentCode
76453
Title
VUV/Low-Energy Electron Si Photodiodes With Postmetal 400 
PureB Deposition
Author
Mohammadi, Vahid ; Lin Qi ; Golshani, Negin ; Mok, Caroline K. R. ; de Boer, Wiebe B. ; Sammak, A. ; Derakhshandeh, J. ; van der Cingel, Johan ; Nanver, Lis K.
Author_Institution
Dept. of Microelectron., Delft Univ. of Technol., Delft, Netherlands
Volume
34
Issue
12
fYear
2013
fDate
Dec. 2013
Firstpage
1545
Lastpage
1547
Abstract
Pure boron (PureB) chemical-vapor deposition performed at 400°C is applied as a postmetalization process module to fabricate near-ideal p+n photodiodes with nm-thin PureB-only beam-entrance windows. The photodiodes have near-theoretical sensitivity and high stability for optical characterization performed with either UV light down to a wavelength of 270 nm or low-energy electrons down to 200 eV.
Keywords
boron; chemical vapour deposition; elemental semiconductors; metallisation; photodiodes; silicon; B; Si; VUV-low-energy electron photodiodes; beam-entrance windows; chemical-vapor deposition; electron volt energy 200 eV; near-ideal p+n photodiodes; near-theoretical sensitivity; optical characterization; post-metalization process module; postmetal pure boron deposition; temperature 400 degC; wavelength 270 nm; Boron; CMOS integrated circuits; Chemical vapor deposition; Photodiodes; Radiation detectors; Silicon; Surface treatment; Boron deposition; Si photodiodes; charged-particle detectors; low-energy electrons; radiation detectors; ultraviolet-light detectors;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2013.2287221
Filename
6651737
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