Title :
13 GHz 4.67 dB NF CMOS low-noise amplifier
Author :
Gil, J. ; Kwangseok Han ; Hyungcheol Shin
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea
fDate :
7/10/2003 12:00:00 AM
Abstract :
The design and measured results of a fully-integrated 13 GHz CMOS low-noise amplifier (LNA) are presented. Effects of substrate resistances on LNA performance are discussed. The LNA has 4.67 dB noise figure and +8.5 dBm of input-referred third-order intercept point (IIP3) with a power consumption of 9.72 mW.
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; field effect MMIC; low-power electronics; 13 GHz; 4.67 dB; 9.72 mW; CMOS; LNA; input-referred third-order intercept point; low-noise amplifier; power consumption; substrate resistances;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20030687
