Title :
Highly reliable 100 mW operation of broad area InGaAlP visible light laser diodes
Author :
Itaya, Kazuhiko ; Shimada, N. ; Hatakoshi, G.
Author_Institution :
Toshiba Corp. Res. & Dev. Center, Kawasaki, Japan
Abstract :
The aging characteristics of broad area InGaAlP visible light laser diodes have been investigated. Asymmetric coatings and a highly p-doped cladding layer were employed. Highly reliable operation, as high as 100 mW for more than 2000 h has been realised at 15 degrees C.
Keywords :
III-V semiconductors; ageing; aluminium compounds; gallium compounds; indium compounds; reliability; semiconductor junction lasers; 100 mW; 15 degC; 2000 hr; InGaAlP; aging characteristics; asymmetric coatings; broad area laser structure; highly p-doped cladding layer; laser diodes; reliable operation; visible light;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911396
