Title :
Transient simulation of heterojunction photodiodes-part I: computational methods
Author :
Leblebici, Yusuf ; Ünlü, M. Selim ; Kang, Sung-Mo ; Onat, Bora M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
fDate :
3/1/1995 12:00:00 AM
Abstract :
A novel approach is presented for incorporating the transient solution of one-dimensional semiconductor drift-diffusion equations within a general circuit simulation tool. This approach allows simple representation of localized carrier transport models of simulated devices through equivalent circuit elements such as voltage controlled current sources and capacitors. It also lends itself to mixed-mode transient simulation of devices and circuits. The utility of the new simulation approach in state-of-the-art device design is demonstrated by the transient response analysis of a GaAs heterojunction p-i-n photodiode, and by the time-domain analysis of an integrated photoreceiver circuit
Keywords :
carrier mobility; gallium arsenide; integrated optoelectronics; optical receivers; p-i-n photodiodes; semiconductor heterojunctions; simulation; time-domain analysis; transients; GaAs; GaAs heterojunction p-i-n photodiode; capacitors; computational methods; equivalent circuit elements; general circuit simulation tool; heterojunction photodiodes; integrated photoreceiver circuit; localized carrier transport models; mixed-mode transient simulation; one-dimensional semiconductor drift-diffusion equations; state-of-the-art device design; time-domain analysis; transient response analysis; transient simulation; transient solution; voltage controlled current sources; Analytical models; Capacitors; Circuit simulation; Equations; Equivalent circuits; Gallium arsenide; Heterojunctions; Transient analysis; Transient response; Voltage control;
Journal_Title :
Lightwave Technology, Journal of