DocumentCode
764723
Title
Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors
Author
Zhang, J. ; Boiadjieva, N. ; Chulkova, G. ; Deslandes, H. ; Tsman, G. N Gol ; Korneev, Alexander ; Kouminov, P. ; Leibowitz, M. ; Lo, W. ; Malinsky, R. ; Okunev, O. ; Pearlman, A. ; Slysz, W. ; Smirnov, K. ; Tsao, C. ; Verevkin, A. ; Voronov, B. ; Wilsher
Author_Institution
Dept. of Electr., Univ. of Rochester, NY, USA
Volume
39
Issue
14
fYear
2003
fDate
7/10/2003 12:00:00 AM
Firstpage
1086
Lastpage
1088
Abstract
The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed.
Keywords
CMOS integrated circuits; infrared detectors; integrated circuit testing; niobium compounds; superconducting photodetectors; near-infrared photon emission; noninvasive CMOS circuit testing; switching MOS transistor; thick-film meander-structure NbN superconducting single-photon detector;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20030710
Filename
1220832
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