DocumentCode
764880
Title
Tunnel Magnetoresistance Effect in CoFeB/MgO/Co 
FeSi and Co MnSi Tunnel Junctions
Author
Daibou, T. ; Shinano, M. ; Hattori, M. ; Sakuraba, Y. ; Oogane, M. ; Ando, Y. ; Miyazaki, T.
Author_Institution
Graduate Sch. of Eng., Tohoku Univ., Sendai
Volume
42
Issue
10
fYear
2006
Firstpage
2655
Lastpage
2657
Abstract
We have fabricated MgO-based magnetic tunnel junctions (MTJs) with the CoFeB bottom electrode and top electrodes of poly crystalline Co2FeSi and Co2MnSi Heusler alloys. We have measured temperature dependence of the TMR ratio and TMR-V characteristics at 6 K. We have achieved a high TMR ratio of 90% at RT for the MTJ with Co2FeSi electrode after annealing at 325degC. The MTJ with Co2MnSi electrode showed a significant annealing temperature dependence of the TMR ratio. The increase of TMR ratio by annealing is due to the crystallization of the Co2MnSi Heusler layer. Furthermore, the strong temperature dependence of TMR ratio and the anomalous TMR-V characteristics have been observed in the MTJ with Co2MnSi
Keywords
boron alloys; cobalt alloys; iron alloys; magnesium compounds; magnetic multilayers; silicon alloys; tunnelling magnetoresistance; 325 C; 6 K; Co2MnSi; CoFeB-MgO-Co2FeSi; Heusler alloys; TMR ratio; TMR-V characteristics; annealing temperature dependence; magnetic tunnel junctions; tunnel magnetoresistance; Amorphous magnetic materials; Annealing; Cobalt alloys; Crystallization; Electrodes; Insulation; Magnetic tunneling; Polarization; Temperature dependence; Tunneling magnetoresistance; CoFeB; Heusler alloys; MTJs; MgO;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2006.879733
Filename
1704395
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