DocumentCode :
764918
Title :
Modeling of waveguide PIN photodetectors under very high optical power
Author :
Harari, Joseph ; Journet, Frédéric ; Rabii, Omar ; Jin, Guanghai ; Vilcot, Jean Pierre ; Decoster, Didier
Author_Institution :
CNRS, Inst. d´´Electron. et de Microelectronique du Nord, Villeneuve d´´Ascq, France
Volume :
43
Issue :
9
fYear :
1995
fDate :
9/1/1995 12:00:00 AM
Firstpage :
2304
Lastpage :
2310
Abstract :
In this paper, the behavior under very high optical power of waveguide PIN photodetectors grown on InP substrate is simulated. The problem is solved using a pseudo-bidimensional drift-diffusion model which describes the electrical behavior of the device including the effects of the external circuit. The optical behavior of the device is analysed using FD 2D and 3D beam propagation method. First, we present the optical behavior of the device when the illumination conditions change. Influence of device structure, spot width, spot position and injection angle on the quantum efficiency of the photodetector is so studied. Second, the whole modeling is validated using experimental results given in the literature. Three typical multimode structures w hich allow a high cut-off frequency as well as a good responsivity are then modeled and compared. The smaller one has a cut-off frequency of 75 GHz in small signal conditions and the main effect decreasing the microwave output signal when the optical input power increases is the carrier effect in the depletion region of the photodetector. The maximum microwave power of each photodetector is calculated in typical conditions of use
Keywords :
equivalent circuits; indium compounds; optical receivers; optical waveguides; p-i-n photodiodes; photodetectors; semiconductor device models; 2D beam propagation method; 3D beam propagation method; 75 GHz; InP; InP substrate; carrier effect; cutoff frequency; depletion region; device structure; electrical behavior; external circuit effects; illumination conditions; injection angle; microwave output signal; modeling; multimode structures; optical behavior; optical input power; pseudo-bidimensional drift-diffusion model; quantum efficiency; responsivity; spot position; spot width; waveguide PIN photodetectors; Circuit simulation; Cutoff frequency; Indium phosphide; Lighting; Optical devices; Optical modulation; Optical propagation; Optical saturation; Optical waveguides; Photodetectors;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/22.414582
Filename :
414582
Link To Document :
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