Title :
Gain nonlinearity and its temperature dependence in bulk- and quantum-well quaternary lasers
Author :
Bermussi, A.A. ; Temkin, H. ; Coblentz, D.L. ; Logan, R.A.
Author_Institution :
Dept. of Electr. Eng., Colorado State Univ., Fort Collins, CO, USA
fDate :
4/1/1995 12:00:00 AM
Abstract :
Spectrally resolved measurements of unclamped spontaneous emission above threshold in 1.3 μm InGaAsP bulk double heterostructure and compressively strained multiquantum-well lasers are analyzed using steady state rate equations. Both types of structures are characterized by nonlinear gain coefficients in the range of (2.7-3.0)×10/sup -17/ cm3 at 20/spl deg/C. The nonlinear gain coefficient decreases with increasing temperature due to thermionic emission of carriers out of the active region and decreasing differential gain. The former effect was found to be more pronounced in quantum-well lasers. Excellent agreement with the rate equation based model is obtained.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser variables measurement; nonlinear optics; quantum well lasers; spontaneous emission; thermionic emission; 1.3 mum; 20 C; InGaAsP; InGaAsP bulk double heterostructure; above threshold; active region; bulk quaternary lasers; compressively strained multiquantum-well lasers; differential gain; gain nonlinearity; increasing temperature; nonlinear gain coefficient; nonlinear gain coefficients; quantum-well lasers; quantum-well quaternary lasers; rate equation based model; spectrally resolved measurements; steady state rate equations; temperature dependence; thermionic emission; unclamped spontaneous emission; Carrier confinement; Nonlinear equations; Nonlinear optics; Quantum well devices; Quantum well lasers; Radiative recombination; Spontaneous emission; Steady-state; Stimulated emission; Temperature dependence;
Journal_Title :
Photonics Technology Letters, IEEE
