Temperature Dependence of Spin Transfer Switching in Nanosecond Regime

Author

Apalkov, Dmytro ; Diao, Zhitao ; Panchula, Alex ; Wang, Shengyuan ; Huai, Yiming ; Kawabata, Kiyoshi

Author_Institution

Maxtor, Inc., Shrewsbury, MA

Volume

42

Issue

10

fYear

2006

Firstpage

2685

Lastpage

2687

Abstract

We present a micromagnetic modeling study of spin transfer (ST) switching in magnetic tunneling junctions (MTJs) and its dependence on thermal effects due to a finite temperature of the MTJ. It is shown that the major effect of temperature is the introduction of nonzero distribution of local magnetization deviation from the easy axis of the free layer. The study of asymmetry between antiparallel (AP) to parallel (P) and P to AP switching is presented

Keywords

magnetic multilayers; magnetic tunnelling; micromagnetics; spin polarised transport; thermal analysis; local magnetization deviation; magnetic memory; magnetic tunneling junctions; micromagnetic modeling; nanosecond regime; spin transfer switching; temperature dependence; thermal effects; Magnetic anisotropy; Magnetic separation; Magnetic switching; Magnetic tunneling; Magnetization; Magnetostatics; Micromagnetics; Perpendicular magnetic anisotropy; Temperature dependence; Torque; Magnetic memories; modeling; spin transfer; thin films;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2006.878817

Filename

1704405