Title :
GaAs MQW modulators integrated with silicon CMOS
Author :
Goossen, K.W. ; Walker, J.A. ; Asaro, L. A D ; Hui, S.P. ; Tseng, B. ; Leibenguth, R. ; Kossives, D. ; Bacon, D.D. ; Dahringer, D. ; Chirovsky, L.M.F. ; Lentine, A.L. ; Miller, D.A.B.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
fDate :
4/1/1995 12:00:00 AM
Abstract :
We demonstrate integration of GaAs-AlGaAs multiple quantum well modulators to silicon CMOS circuitry via flip-chip solder-bonding followed by substrate removal. We obtain 95% device yield for 32/spl times/32 arrays of devices with 15 micron solder pads. We show operation of a simple circuit composed of a modulator and a CMOS transistor.<>
Keywords :
CMOS integrated circuits; III-V semiconductors; aluminium compounds; electro-optical modulation; gallium arsenide; integrated optoelectronics; semiconductor quantum wells; soldering; wafer bonding; 15 micron; 32/spl times/32 arrays; CMOS transistor; GaAs MQW modulators; GaAs-AlGaAs; GaAs-AlGaAs multiple quantum well modulators; Si; device yield; flip-chip solder-bonding; silicon CMOS; silicon CMOS circuitry; solder pads; substrate removal; Bonding; Circuits; Coatings; Etching; Fabrication; Gallium arsenide; Optical interconnections; Quantum well devices; Silicon; Substrates;
Journal_Title :
Photonics Technology Letters, IEEE
