Zinc-Blende Structure of CrTe Epilayers Grown on GaAs

Author

Sreenivasan, M.G. ; Teo, K.L. ; Jalil, M.B.A. ; Liew, T. ; Chong, T.C. ; Du, A.Y.

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore

Volume

42

Issue

10

fYear

2006

Firstpage

2691

Lastpage

2693

Abstract

We report the synthesis of zinc-blende CrTe (zb-CrTe) as highly oriented crystalline grains in films of 100-nm thickness. The structural properties of the film were characterized using high-resolution transmission electron microscopy (HRTEM) and selective-area electron diffraction (SAED). Temperature-dependent magnetization measurements show that the Curie temperature of the film is ~327 K. Angular M-H measurements indicate that the CrTe films have an in-plane easy axis of magnetization along the [01macr1] direction of GaAs

Keywords

III-V semiconductors; chromium alloys; epitaxial growth; gallium arsenide; magnetic epitaxial layers; magnetic multilayers; magnetisation; tellurium alloys; transmission electron microscopy; 100 nm; CrTe-GaAs; Curie temperature; HRTEM; SAED; ferromagnetic; highly oriented crystalline grains; molecular-beam epitaxy; selective-area electron diffraction; transmission electron microscopy; zinc-blende structure; Chromium; Diffraction; Electrons; Gallium arsenide; Magnetization; Metastasis; Substrates; Tellurium; Temperature; Zinc compounds; CrTe; ferromagnetic; molecular-beam epitaxy; zinc-blende;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2006.878851

Filename

1704407