DocumentCode :
765019
Title :
Graphene Spin Valve Devices
Author :
Hill, Ernie W. ; Geim, Andre K. ; Novoselov, Konstantin ; Schedin, Frederik ; Blake, Peter
Author_Institution :
Dept. of Comput. Sci., Manchester Univ.
Volume :
42
Issue :
10
fYear :
2006
Firstpage :
2694
Lastpage :
2696
Abstract :
Graphene-a single atomic layer of graphite-is a recently found two-dimensional (2-D) form of carbon, which exhibits high crystal quality and ballistic electron transport at room temperature. Soft magnetic NiFe electrodes have been used to inject polarized spins into graphene, and a 10% change in resistance has been observed as the electrodes switch from the parallel to the antiparallel state. This coupled with the fact that a field-effect electrode can modulate the conductivity of these graphene films makes them exciting potential candidates for spin electronic devices
Keywords :
ballistic transport; enhanced magnetoresistance; soft magnetic materials; spin polarised transport; spin valves; antiparallel state; ballistic electron transport; field-effect electrode; graphene films; graphene spin valve devices; graphite layer; magnetoresistive devices; polarized spins; soft magnetic films; spin electronic devices; Atomic layer deposition; Electrodes; Electrons; Magnetic switching; Polarization; Soft magnetic materials; Spin valves; Switches; Temperature; Two dimensional displays; Magnetoresistive devices; soft magnetic films; thin films;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2006.878852
Filename :
1704408
Link To Document :
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