Title :
A Heat Interaction Investigation in Thermally Assisted MRAM
Author :
Liu, Z.Y. ; Han, G.C. ; Zheng, Y.K.
Author_Institution :
Data Storage Inst., Singapore
Abstract :
Joule heating has been used to help the magnetic switching of the magnetic layer in magnetic random access memory cells with increased temperature. In this paper, the heat interaction is investigated for different cell dimensions and aspect ratios. It is found that the heat interaction becomes significant when the cell spacing is below the critical spacing (CS). We also find that the aspect ratio also plays an equally important role in determining the CS
Keywords :
magnetic multilayers; magnetic storage; magnetic switching; random-access storage; Joule heating; cell spacing; critical spacing; heat interaction; magnetic layer; magnetic random access memory; magnetic switching; Antiferromagnetic materials; Connectors; Heating; Insulation; Magnetic materials; Magnetic switching; Magnetization; Random access memory; Temperature; Writing; Heat; interaction; magnetic random access memory (MRAM);
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2006.879724
