DocumentCode
765090
Title
A Heat Interaction Investigation in Thermally Assisted MRAM
Author
Liu, Z.Y. ; Han, G.C. ; Zheng, Y.K.
Author_Institution
Data Storage Inst., Singapore
Volume
42
Issue
10
fYear
2006
Firstpage
2715
Lastpage
2717
Abstract
Joule heating has been used to help the magnetic switching of the magnetic layer in magnetic random access memory cells with increased temperature. In this paper, the heat interaction is investigated for different cell dimensions and aspect ratios. It is found that the heat interaction becomes significant when the cell spacing is below the critical spacing (CS). We also find that the aspect ratio also plays an equally important role in determining the CS
Keywords
magnetic multilayers; magnetic storage; magnetic switching; random-access storage; Joule heating; cell spacing; critical spacing; heat interaction; magnetic layer; magnetic random access memory; magnetic switching; Antiferromagnetic materials; Connectors; Heating; Insulation; Magnetic materials; Magnetic switching; Magnetization; Random access memory; Temperature; Writing; Heat; interaction; magnetic random access memory (MRAM);
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2006.879724
Filename
1704415
Link To Document