Title :
1.8 V Power Supply 16 Mb-MRAMs With 42.3% Array Efficiency
Author :
Yoda, Hiroaki ; Kai, Tadashi ; Inaba, Tsuneo ; Iwata, Yoshihisa ; Shimomura, Naoharu ; Ikegawa, Sumio ; Tsuchid, Kenji ; Asao, Yoshiaki ; Kishi, Tatsuya ; Ueda, Tomomasa ; Takahashi, Shigeki ; Nagamine, Makoto ; Kajiyama, Takeshi ; Yoshikawa, Masatoshi ;
Author_Institution :
SoC Res. & Dev. Center, Toshiba Corp., Yokohama
Abstract :
Technologies for realizing high density MRAM were developed. First, new circuitry to lower the resistance of programming wires was developed. Second, both MTJ plane shape and cross-sectional structure were optimized to lower the programming current. Based on these two technologies, 16 Mb MRAM was designed, fabricated with 130 nm CMOS process and 240 nm back end MTJ process. As a result, a 1.8 V power supply MRAM with 42.3% array efficiency was successfully demonstrated
Keywords :
CMOS memory circuits; magnetic storage; magnetic tunnelling; magnetoresistive devices; random-access storage; 1.8 V; 130 nm; 16 MBytes; 240 nm; CMOS process; magnetic tunnel junction; magnetoresistive random access memory; programming wires; CMOS technology; Circuit simulation; Low voltage; Magnetic tunneling; Power supplies; Random access memory; Research and development; Shape; Switches; Wires; Magnetic tunnel junction (MTJ); magnetoresistive random access memory (MRAM);
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2006.880081
