Extrinsic frequency response of a wide-bandwidth metal semiconductor metal diode

Author

Hio-Hong Ieong ; Ferendeci, A.M. ; Xue Long Cao ; Jackson, H.E.

Author_Institution

Dept. of Electr. & Comput. Eng., Cincinnati Univ., OH, USA

Volume

7

Issue

4

fYear

1995

fDate

4/1/1995 12:00:00 AM

Firstpage

415

Lastpage

417

Abstract

The active area of an interdigitated GaAs MSM diode with 1-μm finger width and spacing is extended with two novel structures, one an integrated tapered coplanar waveguide and another coplanar stripline transmission line. The diodes were illuminated by 5-ps laser pulses of 30-μm in diameter, and the external overall frequency response of the complete system, found by taking the Fourier transform of the detected temporal signal was 2.4 GHz for the coplanar waveguide and 1.4 GHz for the stripline geometry.

Keywords

Fourier transform optics; III-V semiconductors; coplanar waveguides; electrodes; frequency response; gallium arsenide; metal-semiconductor-metal structures; optical planar waveguides; optical waveguide components; photodiodes; 1 mum; 1.4 GHz; 2.4 GHz; 30 mum; 5 ps; Fourier transform; GaAs; active area; coplanar stripline transmission line; coplanar waveguide; detected temporal signal; external overall frequency response; extrinsic frequency response; finger width; illuminated; integrated tapered coplanar waveguide; interdigitated GaAs MSM diode; laser pulses; spacing; stripline geometry; wide-bandwidth metal semiconductor metal diode; Coplanar transmission lines; Coplanar waveguides; Diodes; Fingers; Fourier transforms; Frequency response; Gallium arsenide; Optical pulses; Stripline; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.376820

Filename

376820