Title :
Inductive bandwidth enhancement of sub-μm InAlAs-InGaAs MSM photodetectors
Author :
Kuhl, D. ; Bottcher, E.H. ; Hieronyani, F. ; Droge, E. ; Bimberg, D.
Author_Institution :
Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
fDate :
4/1/1995 12:00:00 AM
Abstract :
We report on the inductive bandwidth enhancement of InGaAs metal-semiconductor-metal photodetectors with finger spacings in the sub-μm range. For optimized circuit design, the calculated frequency response predicts an improvement of the 3-dB bandwidth by more than a factor of two. A first implementation using InAlAs-InGaAs:Fe MSM detectors with 0.7-μm finger spacing results in a 28-GHz bandwidth demonstrating the feasibility of the approach.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; inductance; iron; metal-semiconductor-metal structures; photodetectors; photodiodes; 0.7 mum; 28 GHz; InAlAs-InGaAs MSM photodetectors; InAlAs-InGaAs:Fe; InAlAs-InGaAs:Fe MSM detectors; finger spacings; frequency response; inductive bandwidth enhancement; optimized circuit design; sub-/spl mu/m; Bandwidth; Circuits; Connectors; Contacts; Detectors; Fingers; Frequency response; Indium gallium arsenide; Photodetectors; Wideband;
Journal_Title :
Photonics Technology Letters, IEEE
