Title :
A low-noise broad-band GaAs MESFET monolithic distributed preamplifier
Author :
Freundorfer, A.P. ; Lionais, P.
Author_Institution :
Dept. of Comput. & Inf. Sci., Queen´s Univ., Kingston, Ont., Canada
fDate :
4/1/1995 12:00:00 AM
Abstract :
It is shown that the equivalent input noise current density of a distributed preamplifier of an optical receiver can be improved by using large gate, line matching impedance. A monolithic GaAs MESFET distributed preamplifier, utilizing this design consideration, was fabricated. Using a 35 μm InGaAs p-i-n photodiode, it was shown to have an equivalent input noise current density of 8 pA//spl radic/(Hz) and an 8 GHz bandwidth. To date, this is the best known result for a 0.8 μm GaAs MESFET process.
Keywords :
III-V semiconductors; MESFET integrated circuits; current density; gallium arsenide; integrated optoelectronics; optical receivers; p-i-n photodiodes; preamplifiers; 35 mum; 8 GHz; GaAs; InGaAs; InGaAs p-i-n photodiode; design consideration; distributed preamplifier; equivalent input noise current density; line matching impedance; low-noise broad-band GaAs MESFET monolithic distributed preamplifier; monolithic GaAs MESFET distributed preamplifier; optical receiver; Bandwidth; Current density; Gallium arsenide; Impedance; Indium gallium arsenide; MESFETs; Optical noise; Optical receivers; PIN photodiodes; Preamplifiers;
Journal_Title :
Photonics Technology Letters, IEEE
