A low-noise broad-band GaAs MESFET monolithic distributed preamplifier

Author

Freundorfer, A.P. ; Lionais, P.

Author_Institution

Dept. of Comput. & Inf. Sci., Queen´s Univ., Kingston, Ont., Canada

Volume

7

Issue

4

fYear

1995

fDate

4/1/1995 12:00:00 AM

Firstpage

424

Lastpage

426

Abstract

It is shown that the equivalent input noise current density of a distributed preamplifier of an optical receiver can be improved by using large gate, line matching impedance. A monolithic GaAs MESFET distributed preamplifier, utilizing this design consideration, was fabricated. Using a 35 μm InGaAs p-i-n photodiode, it was shown to have an equivalent input noise current density of 8 pA//spl radic/(Hz) and an 8 GHz bandwidth. To date, this is the best known result for a 0.8 μm GaAs MESFET process.

Keywords

III-V semiconductors; MESFET integrated circuits; current density; gallium arsenide; integrated optoelectronics; optical receivers; p-i-n photodiodes; preamplifiers; 35 mum; 8 GHz; GaAs; InGaAs; InGaAs p-i-n photodiode; design consideration; distributed preamplifier; equivalent input noise current density; line matching impedance; low-noise broad-band GaAs MESFET monolithic distributed preamplifier; monolithic GaAs MESFET distributed preamplifier; optical receiver; Bandwidth; Current density; Gallium arsenide; Impedance; Indium gallium arsenide; MESFETs; Optical noise; Optical receivers; PIN photodiodes; Preamplifiers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.376823

Filename

376823