DocumentCode :
765229
Title :
Magnetic Flip Flops for Space Applications
Author :
Hass, K.J. ; Donohoe, G.W. ; Hong, Y.K. ; Choi, B.C.
Author_Institution :
Center for Adv. Microelectron. & Biomolecular Res., Univ. of Idaho, Post Falls, ID
Volume :
42
Issue :
10
fYear :
2006
Firstpage :
2751
Lastpage :
2753
Abstract :
The radiation environment of space presents a significant threat to the reliability of nonvolatile memory technologies. Ionizing radiation disturbs the charge stored on floating gates, and cosmic rays can permanently damage thin oxides. A new memory technology based on the magnetic tunneling junction (MTJ) appears to offer superior resistance to radiation effects and virtually unlimited write endurance. A magnetic flip flop has a number of potential applications, such as the configuration memory in field-programmable logic devices. However, using MTJs in a flip flop requires radically different circuitry for storing and retrieving data. New techniques are needed to insure that magnetic flip flops are reliable in the radiation environment of space. We propose a new radiation-tolerant magnetic flip flop that uses the inherent resistance of the MTJ to increase its immunity to single event upset and employs a robust "Pac-man" magnetic element
Keywords :
flip-flops; magnetic logic; magnetic storage; magnetic tunnelling; radiation hardening (electronics); random-access storage; Pac-man; cosmic rays; floating gates; ionizing radiation; magnetic tunneling junction; memory technology; nonvolatile memory technologies; radiation hardening; radiation-tolerant magnetic flip flop; space radiation environment; thin oxides; Circuits; Cosmic rays; Information retrieval; Ionizing radiation; Logic devices; Magnetic devices; Magnetic tunneling; Nonvolatile memory; Radiation effects; Space technology; Magnetic memories; radiation hardening;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2006.879738
Filename :
1704427
Link To Document :
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