Title :
Monolithic integration of singlemode AlGaAs optical waveguides at 830 nm with GaAs E/D-MESFETs using planar multifunctional epistructure (PME) approach
Author :
Mukherjee, Sayan D. ; Hibbs-Brenner, Mary K. ; Sullivan, Charles T. ; Kalweit, E.L. ; Walterson, R.A.
Author_Institution :
Honeywell Inc., Syst. & Res. Center, Bloomington, MN, USA
Abstract :
Singlemode AlGaAs optical waveguides at 830 nm have been monolithically fabricated together with ion-implanted E- and D-mode GaAs MESFETs. The waveguide TE and TM propagation losses are as low as 1.5 dB/cm with <-25 dB depolarisation. E- and D-mode FETs have VT=0.26 and -0.20 V, and gm=160 and 230 mS/mm, respectively.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; electro-optical devices; gallium arsenide; integrated optoelectronics; optical modulation; optical waveguides; 160 mS; 230 mS; 830 nm; AlGaAs optical waveguides; D-mode; E-mode; GaAs; MESFETs; OEIC; TE propagation losses; TM propagation losses; ion-implanted; linear electro-optic effect; modulator; monolithic integration; planar multifunctional epistructure; single mode waveguide; singlemode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911410
