Switching Current Fluctuation and Repeatability for MRAM With Propeller-Shape MTJ

Author

Shimomura, Naoharu ; Yoda, Hiroaki ; Ikegawa, Sumio ; Kai, Tadashi ; Amano, Minoru ; Aikawa, Hisanori ; Ueda, Tomomasa ; Nakayama, Masahiko ; Asao, Yoshiaki ; Hosotani, Keiji ; Shimizu, Yuui ; Tsuchida, Kenji

Author_Institution

Corp. Res. Dev. Center, Toshiba Corp., Kawasaki

Volume

42

Issue

10

fYear

2006

Firstpage

2757

Lastpage

2759

Abstract

The writing region and the repeatability of the function test and switching current fluctuation of magnetoresistive random access memory (MRAM) with a propeller shape magnetic tunnel junction (MTJ) array is evaluated. The effect of the write sequence is also investigated. The writing region is larger when the easy-axis field pulse is turned on prior to the hard-axis field than that in the case of the opposite sequence. However, the total margin in the latter sequence is larger after the repeated tests because of the smaller switching field fluctuation. The average 1-sigma value of the switching field fluctuation is 1.7%, which is mainly caused by the thermal fluctuation. The probability of the write error is estimated to be less than 10^-16 by the bit line writing region and the thermal stability

Keywords

magnetic storage; magnetic tunnelling; magnetoresistive devices; random-access storage; magnetic tunnel junction; magnetoresistive random access memory; switching current fluctuation; switching field fluctuation; thermal fluctuation; thermal stability; Fluctuations; Magnetic switching; Magnetic tunneling; Propellers; Propulsion; Random access memory; Shape; Testing; Tunneling magnetoresistance; Writing; Magnetic tunnel junction (MTJ); magnetoresistive random access memory (MRAM);

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2006.878865

Filename

1704429