Write Windows of a Ballistic Bit Addressing MRAM Write Operation

Author

Schumacher, H.W.

Author_Institution

Phys. Tech. Bundesanstalt, Braunschweig

Volume

42

Issue

10

fYear

2006

Firstpage

2760

Lastpage

2762

Abstract

The size of the write windows for ultrafast magnetic random access memory (MRAM) write operation based on ballistic bit addressing (BBA) is studied. During BBA the magnetization of a bit which is to be reversed undergoes a half precessional turn, whereas a bit which is not to be reversed undergoes a full precessional turn. After BBA pulse application the residual demagnetizing energy of the magnetic bit is low and magnetization ringing is suppressed. By single-spin simulations of the magnetization dynamics of an MRAM cell quasi-static and dynamic switching asteroids and maps of the residual energy after bit addressing are calculated. The results show a sufficient write margin allowing low-ringing ultrafast BBA MRAM write operation

Keywords

magnetic storage; random-access storage; MRAM cell; MRAM write operation; ballistic bit addressing; demagnetizing energy; magnetic bit; magnetic random access memory; magnetization dynamics; magnetization ringing; single-spin simulations; switching asteroids; write windows; Anisotropic magnetoresistance; Damping; Demagnetization; Energy consumption; Geometry; Magnetic switching; Magnetization reversal; Pulse generation; Random access memory; Saturation magnetization; Magnetic random access memory (MRAM); magnetization dynamics; magnetization reversal; precession;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2006.878866

Filename

1704430