Title :
A Novel Dual-Bit MRAM Cell
Author_Institution :
MagLabs Inc., San Jose, CA
Abstract :
A new dual-bit magnetic random acess memory (MRAM) cell of astroid switching type is proposed. The dual-bit stack consists of two conventional MRAM cells connected in series. The two cells are identical except that their cell geometry, anisotropy, and pinned or reference layer orientations are orthogonal to each other. A write scheme is proposed by using the word line and bit line current polarities to write the dual-bit pattern simultaneously. This method doubles the write speed as well as minimizes the writing window margin reduction
Keywords :
magnetic storage; magnetic tunnelling; random-access storage; MRAM cell; astroid switching; bit line current polarities; dual-bit magnetic random access memory; magnetic tunnel junction; memory technology; reference layer orientations; word line current polarities; write speed; writing window margin reduction.; Anisotropic magnetoresistance; Los Angeles Council; Magnetic anisotropy; Magnetic switching; Magnetic tunneling; Magnetization; Perpendicular magnetic anisotropy; Random access memory; Switches; Writing; Magnetic random access memory (MRAM); magnetic tunnel junction (MTJ) memory; memory technology;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2006.878867
