Analysis of Effective Plasma Frequency in a Magnetized Extrinsic Photonic Crystal

Author

Tzu-Chyang King ; Chao-Chin Wang ; Wen-Kai Kuo ; Chien-Jang Wu

Author_Institution

Dept. of Appl. Phys., Nat. Pingtung Univ. of Educ., Pingtung, Taiwan

Volume

5

Issue

6

fYear

2013

fDate

Dec. 2013

Firstpage

2700706

Lastpage

2700706

Abstract

The effective plasma frequency (EPF) in an extrinsic photonic crystal is theoretically analyzed. The extrinsic PC is a single homogeneous doped semiconductor ( n-GaAs) that is influenced by an externally and periodically applied magnetic field. Based on the calculated photonic band structure, we investigate the magnetic-field dependence of EPF. The results reveal that the EPF will be smaller in the absence of the magnetic field and lowered down when the magnetic field increases. The EPF is shown to be a decreasing function of the filling factor of the magnetized region. Additionally, investigation of the first passband and band gap is also given. The study illustrates that such an extrinsic PC possesses tunable optical properties that are of technical use in semiconductor photonic applications.

Keywords

III-V semiconductors; gallium arsenide; magnetic fields; photonic band gap; photonic crystals; GaAs; band gap; effective plasma frequency; filling factor; magnetic-field dependence; magnetized extrinsic photonic crystal; magnetized region; periodically applied magnetic field; photonic band structure; semiconductor photonic applications; single homogeneous doped semiconductor; tunable optical properties; Dielectrics; Educational institutions; Magnetic fields; Permittivity; Photonic crystals; Photonics; Plasmas; Effective plasma frequency; doped semiconductor; extrinsic photonic crystal; transfer matrix method;

fLanguage

English

Journal_Title

Photonics Journal, IEEE

Publisher

ieee

ISSN

1943-0655

Type

jour

DOI

10.1109/JPHOT.2013.2288098

Filename

6651744