DocumentCode :
76530
Title :
Analysis of Effective Plasma Frequency in a Magnetized Extrinsic Photonic Crystal
Author :
Tzu-Chyang King ; Chao-Chin Wang ; Wen-Kai Kuo ; Chien-Jang Wu
Author_Institution :
Dept. of Appl. Phys., Nat. Pingtung Univ. of Educ., Pingtung, Taiwan
Volume :
5
Issue :
6
fYear :
2013
fDate :
Dec. 2013
Firstpage :
2700706
Lastpage :
2700706
Abstract :
The effective plasma frequency (EPF) in an extrinsic photonic crystal is theoretically analyzed. The extrinsic PC is a single homogeneous doped semiconductor ( n-GaAs) that is influenced by an externally and periodically applied magnetic field. Based on the calculated photonic band structure, we investigate the magnetic-field dependence of EPF. The results reveal that the EPF will be smaller in the absence of the magnetic field and lowered down when the magnetic field increases. The EPF is shown to be a decreasing function of the filling factor of the magnetized region. Additionally, investigation of the first passband and band gap is also given. The study illustrates that such an extrinsic PC possesses tunable optical properties that are of technical use in semiconductor photonic applications.
Keywords :
III-V semiconductors; gallium arsenide; magnetic fields; photonic band gap; photonic crystals; GaAs; band gap; effective plasma frequency; filling factor; magnetic-field dependence; magnetized extrinsic photonic crystal; magnetized region; periodically applied magnetic field; photonic band structure; semiconductor photonic applications; single homogeneous doped semiconductor; tunable optical properties; Dielectrics; Educational institutions; Magnetic fields; Permittivity; Photonic crystals; Photonics; Plasmas; Effective plasma frequency; doped semiconductor; extrinsic photonic crystal; transfer matrix method;
fLanguage :
English
Journal_Title :
Photonics Journal, IEEE
Publisher :
ieee
ISSN :
1943-0655
Type :
jour
DOI :
10.1109/JPHOT.2013.2288098
Filename :
6651744
Link To Document :
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