• DocumentCode
    765342
  • Title

    Ion Implantation Condition for 2 μm Period Ion-Implanted Propagation Tracks

  • Author

    Miyashita, Tadakazu ; Betsui, K. ; Tochiki, Y. ; Komenou, K.

  • Author_Institution
    Fujitsu Labs. Ltd., Atsugi.
  • Volume
    1
  • Issue
    5
  • fYear
    1985
  • Firstpage
    582
  • Lastpage
    583
  • Abstract
    Conditions for triple-ion implantation (Ne+, Ne+, H2+) into YSmLuCaGeIG crystal to form snake-type bubble propagation tracks, of period 2 μm and cell size 2 × 2.3 μm, were studied. The dependences on various implantation conditions of the minimum drive field HDmin and the bias margin, for 400°C annealing. Under certain implantation condition, propagation tracks with good characteristics were obtained, with HDmin = 39 Oe and a bias margin of 57-62 Oe for a drive field of 50 Oe.
  • Keywords
    Acceleration; Anisotropic magnetoresistance; Annealing; Hydrogen; Implants; Ion implantation; Magnetics; Plasma temperature; Saturation magnetization; Voltage;
  • fLanguage
    English
  • Journal_Title
    Magnetics in Japan, IEEE Translation Journal on
  • Publisher
    ieee
  • ISSN
    0882-4959
  • Type

    jour

  • DOI
    10.1109/TJMJ.1985.4548871
  • Filename
    4548871
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=765342