DocumentCode :
765342
Title :
Ion Implantation Condition for 2 μm Period Ion-Implanted Propagation Tracks
Author :
Miyashita, Tadakazu ; Betsui, K. ; Tochiki, Y. ; Komenou, K.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi.
Volume :
1
Issue :
5
fYear :
1985
Firstpage :
582
Lastpage :
583
Abstract :
Conditions for triple-ion implantation (Ne+, Ne+, H2+) into YSmLuCaGeIG crystal to form snake-type bubble propagation tracks, of period 2 μm and cell size 2 × 2.3 μm, were studied. The dependences on various implantation conditions of the minimum drive field HDmin and the bias margin, for 400°C annealing. Under certain implantation condition, propagation tracks with good characteristics were obtained, with HDmin = 39 Oe and a bias margin of 57-62 Oe for a drive field of 50 Oe.
Keywords :
Acceleration; Anisotropic magnetoresistance; Annealing; Hydrogen; Implants; Ion implantation; Magnetics; Plasma temperature; Saturation magnetization; Voltage;
fLanguage :
English
Journal_Title :
Magnetics in Japan, IEEE Translation Journal on
Publisher :
ieee
ISSN :
0882-4959
Type :
jour
DOI :
10.1109/TJMJ.1985.4548871
Filename :
4548871
Link To Document :
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