DocumentCode :
76536
Title :
Low-Leakage TiO 
Nanowire Dielectric MOS Device Using Ag Schottky Gate Contact
Author :
Dhar, J.C. ; Mondal, Aniruddha ; Singh, Neeraj Kumar ; Chinnamuthu, P.
Author_Institution :
Dept. of Electron. & Commun. Eng., Nat. Inst. of Technol. Agartala, Agartala, India
Volume :
12
Issue :
6
fYear :
2013
fDate :
Nov. 2013
Firstpage :
948
Lastpage :
950
Abstract :
We have demonstrated the advantage of using a Schottky gate contact and TiO2 nanowire (NW) high- k dielectric in MOS device and silver as the gate electrode. The glancing angle deposited TiO2 NW when used as the gate dielectric over the thin film (TF) significantly improved the electrical characteristics in terms of low Dit (4.17 × 1010 cm-2·eV-1) and low leakage current (8.8 × 10-7A/cm 2) at +1 V bias.
Keywords :
MIS devices; Schottky barriers; dielectric devices; high-k dielectric thin films; leakage currents; nanoelectronics; nanowires; semiconductor thin films; silver; titanium compounds; Ag; NW high-k dielectric; Schottky gate contact; TF; TiO2; electrical characteristics; gate dielectric; gate electrode; glancing angle deposited NW; low leakage current; low-leakage nanowire dielectric MOS device; thin film; voltage 1 V; Capacitance; Dielectrics; Leakage currents; Logic gates; MOS devices; Nanoscale devices; Silicon; Glancing angle deposition (GLAD); MOS; Schottky contact; TiO$_{2}$
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2013.2277600
Filename :
6576273
Link To Document :
