Change in Implantation-Induced Anisotropy in Garnet Films After High-Temperature Annealing

Citing the current poor understanding of changes in anisotropy field due to nonmagnetostrictive effects, the authors report the effect of high-temperature (up to 1000°C) annealing on anisotropy field change ¿Hk and lattice strain in Ne⁺ or H⁺ implanted garnet films. In all cases, the ¿Hk after annealing was found to depend only on the radiation damage level; the critical damage level at which ¿Hk saturated was about 2.4 eV/A3. The ¿Hk was attributed mainly to suppression of growth-induced anisotropy, caused by the radiation damage. The results for a second implantation-annealing were consistent with this.