Title :
Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate
Author :
Ducatteau, D. ; Minko, A. ; Hoel, Virginie ; Morvan, E. ; Delos, E. ; Grimbert, B. ; Lahreche, H. ; Bove, P. ; Gaquiere, C. ; De Jaeger, J.C. ; Delage, S.
Author_Institution :
IEMN-TIGER, Lille Univ., Villeneuve d´Ascq, France
Abstract :
Microwave frequency capabilities of AlGaN/GaN high electron mobility transistors (HEMTs) on high resistive silicon (111) substrate for power applications are demonstrated in this letter. A maximum dc current density of 1 A/mm and an extrinsic current gain cutoff frequency (FT) of 50 GHz are achieved for a 0.25 μm gate length device. Pulsed and large signal measurements show the good quality of the epilayer and the device processing. The trapping phenomena are minimized and consequently an output power density of 5.1 W/mm is reached at 18 GHz on a 2×50×0.25 μm2 HEMT with a power gain of 9.1dB.
Keywords :
III-V semiconductors; aluminium compounds; current density; elemental semiconductors; gallium compounds; high electron mobility transistors; microwave field effect transistors; semiconductor device measurement; silicon; substrates; wide band gap semiconductors; 0.25 micron; 18 GHz; 50 GHz; 9.1 dB; AlGaN-GaN-Si; dc current density; high electron mobility transistors; high resistive silicon substrate; microwave frequency capabilities; power density; trapping effects; Aluminum gallium nitride; Current density; Cutoff frequency; Gallium nitride; HEMTs; MODFETs; Microwave frequencies; Power generation; Pulse measurements; Silicon; AlGaN/GaN; Si (111); high electron mobility transistors (HEMTs); power density; trapping effects;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2005.860385
